unisonic technologies co., ltd utt3205 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-510.b n-channel enhancement mode power mosfet ? description the utc utt3205 uses advanced technology to provide excellent r ds(on) , fast switching, low gate charge, and excellent efficiency. this device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts. ? features * r ds(on) < 20m ? @ v gs =10v * ultra low gate charge ( 146nc max ) * low reverse transfer capacitance ( c rss = typ. 211 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 utt3205l-ta3-t UTT3205G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
utt3205 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-510.b ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit gate-source voltage v gss 20 v drain current continuous (v gs =10v) i d 110 a pulsed (note 2) i dm 390 avalanche current (note 2) i ar 62 a avalanche energy repetitive (note 2) e ar 20 mj single pulsed (note 3) e as 450 power dissipation (t c =25c) p d 200 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) t j =25c, l=138 h, r g =25 ? , i as =62a ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 0.75 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 55 v drain-source leakage current i dss v ds =55v,v gs =0v 25 a gate- source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na breakdown voltage temperature coefficient bv dss / t j reference to 25c, i d =1ma 0.057 v/c on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1.4 3.0 v static drain-source on-resistance (note) r ds(on) v gs =10v, i d =62a 20 m ? dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1mhz 3247 pf output capacitance c oss 781 pf reverse transfer capacitance c rss 211 pf switching parameters total gate charge q g v ds =44v, i d =62a, v gs =10v 146 nc gate source charge q gs 35 nc gate drain charge q gd 54 nc turn-on delay time t d(on) v dd =28v, i d =62a, r g =4.5 ? , v gs =10v (note) 14 ns turn-on rise time t r 101 ns turn-off delay time t d(off) 50 ns turn-off fall-time t f 65 ns internal drain inductance l d 4.5 nh internal source inductance l s 7.5 nh source- drain diode ratings and characteristics diode forward voltage v sd i s =62a ,v gs =0v 1.3 v maximum continuous drain-source diode forward current i s 110 a maximum pulsed drain-source diode forward current i sm 390 a note: pulse width 400 s; duty cycle 2%.
utt3205 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-510.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
utt3205 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-510.b ? test circuits and waveforms (cont.) v gs d.u.t. r g v gs v ds pulse width 1 s duty factor 0.1% v dd r l v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms v d charge q gs q gd q g v gs gate charge test circuit gate charge waveform d.u.t. v gs v ds t p i as driver l v dd 0.01 ? r g v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
utt3205 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-510.b ? typical characteristics drain current vs. drain-source breakdown voltage 0 drain current, i d (a) drain-source breakdown voltage, bv dss (v) 0.5 0 0 50 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 100 150 200 250 300 50 100 150 200 250 300 10 20 30 1.0 1.5 2.0 40 0 50 60 70 2.5 3.0 0 drain current vs. source to drain voltage source to drain voltage, v sd (v) 0 drain current, i d (a) 0.2 0 drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (mv) 0 4 8 0.4 0.6 0.8 1.0 2 4 6 8 10 12 50 100 150 200 12 16 20 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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